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LMQ61460/TI
    发布时间: 1970-01-01 08:00    

LMQ61460/TI

LMQ61460/TI
  • Optimized for ultra-low EMI requirements
    • Hotrod™ package minimizes switch node ringing
    • Internal bypass capacitors reduce EMI
    • Parallel input path minimizes parasitic inductance
    • Spread spectrum reduces peak emissions
    • Adjustable switch node rise time
  • Designed for rugged applications
    • Supports 42-V transient
    • 0.4-V dropout with 4-A load (typical)
  • High efficiency power conversion at all loads
    • 7-µA no load current at 13.5 VIN, 3.3 VOUT
    • 90% PFM efficiency at 1-mA, 13.5 VIN, 5 VOUT
    • Low MOSFET ON resistance
      • RDS_ON_HS = 41 mΩ (typical)
      • RDS_ON_LS = 21 mΩ (typical)
  • External bias option for improved efficiency
  • Pin compatible with: